IGBT (Insulated Gate Bipolar Transistor) and Super Junction MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) are power semiconductor devices that are used as an electronic switch in various industrial and automotive applications such as electric and hybrid electric vehicles, renewable energy inverters, industrial motor drives, and power supplies due to their high efficiency and fast switching capabilities.
The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 5.1% over the forecast period 2023 to 2030, as highlighted in a new report published by Coherent Market Insights.
Market key trends:
The IGBT and Super Junction MOSFET market is witnessing significant growth due to rising deployment of these devices in electric vehicles and renewable energy systems. With growing emphasis on reducing carbon emissions, the sales of electric vehicles have increased substantially over the past few years. IGBTs are widely used in electric vehicle powertrains as they allow for high-power switching with maximum efficiency. Similarly, IGBTs and super junction MOSFETs are the preferred devices for renewable energy inverters that convert the direct current generated from solar panels and wind turbines into alternating current. The higher conversion efficiency of these devices enables greater energy yield from renewable systems. The continuous expansion of the electric vehicle and renewable energy industries is expected to drive the demand for IGBT and super junction MOSFETs over the forecast period.
Segment Analysis
The global IGBT and Super Junction MOSFET market is dominated by the Industrial segment. Industrial devices such as inverters, solar modules, electric vehicles chargers, applications require high power switching which is efficiently delivered by IGBT and Super Junction MOSFET devices. The industrial segment accounts for more than 35% of the overall market share owing to widespread adoption of IGBT/SJ MOSFETs for motor drives, power supplies in applications related to automotive manufacturing, renewable energy production, factory automation, and oil & gas equipment among others.
Key Takeaways
The global IGBT And Super Junction MOSFET Market Share is expected to witness high growth over the forecast period of 2023 to 2030. Advanced applications requiring high efficiency power switching capabilities are emerging in industries such as electric vehicles, renewable energy, automation demanding wider adoption of IGBTs and SJ MOSFETs. The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 5.1% over the forecast period 2023 to 2030.
Regional analysis
The Asia Pacific region currently dominates the global market and is expected to maintain its lead position over the forecast period. This can be attributed to early adoption of industrial automation, presence of automotive and electronics manufacturing hubs, and government support for renewable energy projects in countries such as China, Japan, South Korea and India. Rapid industrialization and infrastructure development activities are fueling the demand for IGBT and SJ MOSFET integrated products in the region.
Key players
Key players operating in the IGBT and Super Junction MOSFET market are Infineon, Mitsubishi Electric Corporation, Fuji Electric, ABB, Toshiba, Hitachi, Semikron, Danfoss, StarPower Semiconductor, Renesas Electronics, ROHM, Littelfuse (IXYS), Vincotech, UnitedSiC. Infineon and Mitsubishi Electric capture majority of global market share owing to their robust product portfolio and wide distribution channels for power modules catering to diverse industrial applications globally.
For more details on the report, Read- https://www.ukwebwire.com/immunology-market-value-demand-analysis-and-forecast/
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